View IPW60R070C6_4914721.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

MOSFET
Metal Oxide Semiconductor Field Effect Transistor
CoolMOS C6
600V CoolMOSTM C6 Power Transistor IPW60R070C6
Data Sheet
Rev. 2.1, 2010-02-09 Final
Industrial & Multimarket
600V CoolMOSTM C6 Power Transistor
IPW60R070C6
1
Description
CoolMOSTM is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies. CoolMOSTM C6 series combines the experience of the leading SJ MOSFET supplier with high class innovation. The offered devices provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler.
drain pin 2
Features * * * * Extremely low losses due to very low FOM Rdson*Qg and Eoss Very high commutation ruggedness Easy to use/drive JEDEC1) qualified, Pb-free plating, Halogen free
gate pin 1
source pin 3
Applications PFC stages, hard switching PWM stages and resonant switching PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV, Lighting, Server, Telecom, UPS and Solar.
Please note: For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.
Table 1 Parameter
Key Performance Parameters Value 650 0.07 170 159 13 300 Package PG-TO247 Unit V nC A J A/s Marking 6R070C6 Related Links IFX C6 Product Brief IFX C6 Portfolio IFX CoolMOS Webpage IFX Design tools
VDS @ Tj,max
RDS(on),max
Qg,typ ID,pulse Eoss @ 400V
Body diode di/dt Type IPW60R070C6
1) J-STD20 and JESD22
Final Data Sheet
2
Rev. 2.1, 2010-02-09
600V CoolMOSTM C6 Power Transistor IPW60R070C6
Table of Contents
Table of Contents
1 2 3 4 5 6 7 8 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
Final Data Sheet
3
Rev. 2.1, 2010-02-09
600V CoolMOSTM C6 Power Transistor IPW60R070C6
Maximum ratings
2
Maximum ratings
at Tj = 25 C, unless otherwise specified. Table 2 Parameter Continuous drain current Pulsed drain current
2) 1)
Maximum ratings Symbol Min. ID ID,pulse EAS EAR IAR dv/dt VGS Ptot Tj,Tstg IS IS,pulse dv/dt -20 -30 -55 2) 3)
Values Typ. Max. 53 34 159 1135 1.72 9.3 50 20 30 391 150 60 46 159 15 300
Unit A A mJ
Note / Test Condition TC= 25 C TC= 100C TC=25 C ID=9.3 A,VDD=50 V (see table 17) ID=9.3 A,VDD=50 V
Avalanche energy, single pulse Avalanche energy, repetitive Avalanche current, repetitive MOSFET dv/dt ruggedness Gate source voltage Power dissipation Operating and storage temperature Mounting torque Continuous diode forward current Diode pulse current Reverse diode dv/dt
A V/ns V W C Ncm A A V/ns A/s M3 and M3.5 screws TC=25 C TC=25 C VDS=0...400 V, ISD ID, Tj=25 C (see table 18) VDS=0...480 V static AC (f>1 Hz) TC=25 C
Maximum diode commutation dif/dt speed3) 1) Limited by Tj,max. Maximum duty cycle D=0.75 2) Pulse width tp limited by Tj,max
3) Identical low side and high side switch with identical RG
3
Table 3 Parameter
Thermal characteristics
Thermal characteristics TO-247 (IPW60R070C6) Symbol Min. Values Typ. Max. 0.32 62 260 C C/W leaded 1.6 mm (0.063 in.) from case for 10 s Unit Note / Test Condition
Thermal resistance, junction - case RthJC Thermal resistance, junction ambient Soldering temperature, wavesoldering only allowed at leads
RthJA Tsold
Final Data Sheet
4
Rev. 2.1, 2010-02-09
600V CoolMOSTM C6 Power Transistor IPW60R070C6
Electrical characteristics
4
Electrical characteristics
Electrical characteristics, at Tj=25 C, unless otherwise specified. Table 4 Parameter Static characteristics Symbol Min. Drain-source breakdown voltage V(BR)DSS Gate threshold voltage Zero gate voltage drain current 600 2.5 Gate-source leakage current 3 50 0.063 0.164 0.85 Values Typ. Max. 3.5 5 100 0.07 nA A V Unit Note / Test Condition
VGS=0 V, ID=0.25 mA VDS=VGS, ID=1.72 mA VDS=600 V, VGS=0 V, Tj=25 C VDS=600 V, VGS=0 V, Tj=150 C VGS=20 V, VDS=0 V VGS=10 V, ID=25.8 A, Tj=25 C VGS=10 V, ID=25.8 A, Tj=150 C f=1 MHz, open drain
VGS(th) IDSS
IGSS
-
Drain-source on-state resistance RDS(on)
Gate resistance
RG
-
Table 5 Parameter
Dynamic characteristics Symbol Min. Values Typ. 3800 215 140 710 16 12 83 Max. ns pF Unit Note / Test Condition
Input capacitance Output capacitance Effective output capacitance, energy related1) Effective output capacitance, time related2) Turn-on delay time Rise time Turn-off delay time
Ciss Coss Co(er) Co(tr) td(on) tr td(off)
VGS=0 V, VDS=100 V, f=1 MHz VGS=0 V, VDS=0...480 V ID=constant, VGS=0 V VDS=0...480V VDD=400 V, VGS=13 V, ID=25.8A, RG= 1.
(see table 16 Fall time tf 5 1) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS 2) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS
Final Data Sheet
5
Rev. 2.1, 2010-02-09
600V CoolMOSTM C6 Power Transistor IPW60R070C6
Electrical characteristics
Table 6 Parameter
Gate charge characteristics Symbol Min. Values Typ. 21 87 170 5.4 Max. V nC Unit Note / Test Condition
Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Table 7 Parameter Diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current
Qgs Qgd Qg Vplateau
VDD=480 V, ID=25.8 A, VGS=0 to 10 V
Reverse diode characteristics Symbol Min. Values Typ. 0.9 720 19 52 Max. V ns C A Unit Note / Test Condition
VSD trr Qrr Irrm
VGS=0 V, IF=25.8 A, Tj=25 C VR=400 V, IF=25.8 A, diF/dt=100 A/s (see table 18)
Final Data Sheet
6
Rev. 2.1, 2010-02-09
600V CoolMOSTM C6 Power Transistor IPW60R070C6
5
Electrical characteristics diagrams
Electrical characteristics diagrams
Table 8 Power dissipation Max. transient thermal impedance
Ptot = f(TC)
Table 9 Safe operating area TC=25 C
Z(thJC)=f(tp); parameter: D=tp/T
Safe operating area TC=80 C
ID=f(VDS); TC=25 C; D=0; parameter tp
ID=f(VDS); TC=80C; D=0; parameter tp
Final Data Sheet
7
Rev. 2.1, 2010-02-09
600V CoolMOSTM C6 Power Transistor IPW60R070C6
Electrical characteristics diagrams Table 10 Typ. output characteristics Tj=25 C Typ. output characteristics Tj=125 C
ID=f(VDS); Tj=25 C; parameter: VGS Table 11 Typ. drain-source on-state resistance
ID=f(VDS); Tj=125 C; parameter: VGS
Drain-source on-state resistance
RDS(on)=f(ID); Tj=125 C; parameter: VGS
RDS(on)=f(Tj); ID=25.8 A; VGS=10 V
Final Data Sheet
8
Rev. 2.1, 2010-02-09
600V CoolMOSTM C6 Power Transistor IPW60R070C6
Electrical characteristics diagrams Table 12 Typ. transfer characteristics Typ. gate charge
ID=f(VGS); VDS=20V Table 13 Avalanche energy
VGS=f(Qgate), ID=25.8 A pulsed
Drain-source breakdown voltage
EAS=f(Tj); ID=9.3 A; VDD=50 V
VBR(DSS)=f(Tj); ID=0.25 mA
Final Data Sheet
9
Rev. 2.1, 2010-02-09
600V CoolMOSTM C6 Power Transistor IPW60R070C6
Electrical characteristics diagrams Table 14 Typ. capacitances Typ. Coss stored energy
C=f(VDS); VGS=0 V; f=1 MHz Table 15 Forward characteristics of reverse diode
EOSS=f(VDS)
IF=f(VSD); parameter: Tj
Final Data Sheet
10
Rev. 2.1, 2010-02-09
600V CoolMOSTM C6 Power Transistor IPW60R070C6
Test circuits
6
Table 16
Test circuits
Switching times test circuit and waveform for inductive load Switching time waveform
Switching times test circuit for inductive load
VDS
VDS VGS
90%
VGS
10% td(off) toff
td(on) ton
tr
tf
Table 17
Unclamped inductive load test circuit and waveform Unclamped inductive waveform
V(BR)DS VD
Unclamped inductive load test circuit
ID
VDS
VDS ID
VDS
Table 18
Test circuit and waveform for diode recovery times Diode recovery waveform
i v
Test circuit for diode recovery times
ID R G1 VDS RG2
diF /d t
F
trr = tS + tF Q rr = Q S + Q F trr tS tF 10% RRM d irr /d t 90% RRM VRRM t
RRM
QS
QF
RG1 = RG2
v
SIL00088
Final Data Sheet
11
Rev. 2.1, 2010-02-09
600V CoolMOSTM C6 Power Transistor IPW60R070C6
Package outlines
7
Package outlines
Figure 1
Outlines TO-247, dimensions in mm/inches 12 Rev. 2.1, 2010-02-09
Final Data Sheet
600V CoolMOSTM C6 Power Transistor IPW60R070C6
Revision History
8
Revision History
CoolMOS C6 600V CoolMOSTM C6 Power Transistor Revision History: 2010-02-09, Rev. 2.1 Previous Revision: Revision 2.0 2.1 Subjects (major changes since last revision) Release of final data sheet New package outlines TO-247
We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com
Edition 2010-02-09 Published by Infineon Technologies AG 81726 Munich, Germany (c) 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Final Data Sheet
13
Rev. 2.1, 2010-02-09

▲Up To Search▲

Price & Availability of IPW60R070C6

	To Download IPW60R070C6 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .